Rectangular Target Design
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In evaluating the relationship between thickness uniformity and the erosion area of a rectangular target, we focus on specific parameters:
Using copper as the target material and argon as the sputtering gas, it is noted that the typical energy of ejected copper atoms is generally under 10 eV. This leads us to calculate the free mean path of copper atoms as:
λcu = 3.45×10^(-4)×(T/P)
At a temperature set at 300 K and a pressure range of 1 to 5 Pascals, the mean free path for copper atoms measures between 21 to 138 mm.
To assess the thin film thickness uniformity under various target conditions, we gauge the uniformity percentage, which is the ratio of the length of the uniform deposition area on the substrate to the total substrate length. This uniform zone is characterized by a deviation of less than 5% in film thickness.
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Length percentage = (Length of uniform deposition zone on substrate / Total substrate length)
Methods of Deposition
A wide array of deposition methodologies exist for fabricating thin films from numerous materials on various substrates, each with unique structures. These methodologies are primarily classified into two categories: Chemical and Physical processes.
Chemical deposition involves a reaction with a precursor fluid that facilitates the formation of a thin layer on a solid substrate. Common techniques include electroplating, sol-gel, dip coating, spin coating, chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), and atomic layer deposition (ALD).
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